Buried channel device structure

摘要

A buried channel device structure for an electrostatic discharge protection circuit capable of minimizing the effect on the electrostatic discharge protection circuit due to current flowing close to gate oxide layer. A p+ ion-doped region is formed above a p-type substrate. The p+ ion-doped region serves as a gate terminal. A first and a second n+ ion-doped region are also formed in the p-type substrate on each side of the p+ gate terminal. In addition, an n-doped region is formed in the p-type substrate under the p+ gate terminal between the first and the second n+ ion-doped region. A similar buried channel device structure can also be formed on an n-type structure.