发明名称 |
Magnetron sputtering method and apparatus |
摘要 |
A first target is arranged opposite a substrate while a second target is arranged not opposite the substrate within a vacuum chamber. Pressure within the vacuum chamber is adjusted to a first pressure, and during a period wherein the pressure is changed from the first pressure to a second pressure which is lower than the first pressure, plasma density above the second target is made greater than plasma density above the first target. At a time point when the second pressure is reached, the plasma density above the first target is made greater than the plasma density above the second target.
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申请公布号 |
US6620298(B1) |
申请公布日期 |
2003.09.16 |
申请号 |
US20000550999 |
申请日期 |
2000.04.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HAYATA HIROSHI |
分类号 |
C23C14/35;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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