| 摘要 |
PURPOSE: A method for manufacturing a gate insulating layer of a semiconductor device is provided to prevent attacks of dopants by using an oxynitridation layer as a gate insulating layer. CONSTITUTION: A semiconductor substrate(10) with an isolation layer(12) is loaded in a reaction furnace with a desired temperature. A native oxide layer(14) with Si-N bond is formed on the semiconductor substrate by rising the temperature of the reaction furnace to thermal oxidation temperature under NH3 atmosphere. An oxynitridation layer is formed on the native oxide layer by oxidizing the resultant structure under N2O or NH3/N2O atmosphere. At this time, the Si-N bond of the native oxide layer(14) moves to upside of the oxynitridation layer.
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