| 摘要 |
A semiconductor device and method for fabricating a semiconductor device yields improved doping efficiency and increased capacitance. The method includes forming a silicon film on a substrate. HSG having a spherical projection forms on a surface of the silicon film. The surface of the silicon film having the HSG is washed, and a lower electrode forms by a doping process. A dielectric film and an upper electrode are sequentially formed on the silicon film without washing.
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