发明名称 In-process device with grooved coating layer on a semiconductor wafer for relieving surface tension
摘要 A method used during the manufacture of a semiconductor device comprises providing a semiconductor wafer assembly, the assembly including a plurality of unsegmented semiconductor dice. A coating layer is formed over the semiconductor wafer assembly which causes the wafer to warp, for example through a surface tension exerted on the wafer assembly by the coating layer. To reduce wafer warp a series of grooves is etched or cut into the coating layer. The grooves are believed to relieve surface tension exerted on the wafer by the coating layer. An inventive structure resulting from the method is also described.
申请公布号 US6621147(B2) 申请公布日期 2003.09.16
申请号 US20020167343 申请日期 2002.06.10
申请人 MICRON TECHNOLOGY INC. 发明人 BALL MICHAEL B.
分类号 H01L21/304;H01L21/31;H01L21/46;H01L21/469;H01L21/78;H01L29/06;(IPC1-7):H01L29/06 主分类号 H01L21/304
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