发明名称 Non-volatile semiconductor memory device
摘要 A specific row of memory cells in a flash memory is set to be in a lock mode state, which affects reading of data in other rows of memory cells in a common memory array. Thus, a flash memory having a data concealing function is achieved.
申请公布号 US6621740(B2) 申请公布日期 2003.09.16
申请号 US20010977296 申请日期 2001.10.16
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HOSOGANE AKIRA;DOHI YOSHITSUGU
分类号 G11C16/02;G11C16/04;G11C16/06;G11C16/22;(IPC1-7):G11C16/06;G11C7/00 主分类号 G11C16/02
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