发明名称 |
Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing |
摘要 |
Deposition of ionized material at a beveled or non-flat edge of a semiconductor wafer and the etching by the ionized material at such edge is controlled in a high density plasma processing machine by surrounding the wafer with a conducting ring to affect sheath potential and deflecting the ions of the material in such a way that the deposition and etching rate changes in a controlled way over the region immediately adjacent the wafer edge. The ring may be biased in several ways to control the ion flux to the wafer edge.
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申请公布号 |
US6620736(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20010911678 |
申请日期 |
2001.07.24 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
DREWERY JOHN |
分类号 |
C23C14/04;C23C14/34;C23C14/35;C23C14/50;H01J37/32;H01L21/00;(IPC1-7):H01L21/00;H05H1/02;H05H1/00;C23C16/00 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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