| 摘要 |
An EEPROM segment bit line page memory array includes a plurality of bit lines extending in a Y-direction; a plurality of word lines extending in an X-direction; a plurality of sub-bit lines extending in the Y-direction; a plurality of segment select word lines extending in the X-direction; a plurality of segment select devices arranged in a segment select row; and a plurality of EEPROM floating gate memory devices arranged in the X- and Y-directions. Each of the segment select devices connects one of the sub-bit lines to a corresponding one of the bit-lines. Plural gates of the segment select devices in each segment select row are connected to one of the segment select word lines. Each of the memory devices connects adjacent sub-bit lines, and corresponding control gates of plural memory devices in a memory device row arc electrically connected to one of the word lines.
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