发明名称 Method of producing low thermal budget high dielectric constant structures
摘要 Methods are presented for reducing the thermal budget in a semiconductor manufacturing process that include for instance, depositing high dielectric constant films to form MIS capacitors, where processes including plasma nitridation and oxidation and deposition processes including ALD and PVD are selectively employed to lower the overall thermal budget thereby allowing smaller structures to be reliably manufactured.
申请公布号 US6620702(B2) 申请公布日期 2003.09.16
申请号 US20010891440 申请日期 2001.06.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 SHIH WONG-CHENG;CHAO LAN-LIN
分类号 H01L21/314;H01L21/316;(IPC1-7):H01L21/20;H01L21/824 主分类号 H01L21/314
代理机构 代理人
主权项
地址