发明名称 Pattern correcting method and pattern verifying method
摘要 A pattern of exposure mask-use design data having a hierarchical structure is corrected in order to finish with fidelity a transfer pattern to be formed on a wafer, in which if the exposure apparatus has a light source shape that does not have rotation symmetry at any given angle around an optical axis, as the center, of an illumination optics or a projection optics, a cell A rotated in arrangement in input data having a hierarchical structure is replaced with a cell A' not employing rotation and then optical proximity correction is effected.
申请公布号 US6622297(B2) 申请公布日期 2003.09.16
申请号 US20010956987 申请日期 2001.09.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UNO TAIGA;YAMAMOTO KAZUKO;KOBAYASHI SACHIKO;TANAKA SATOSHI
分类号 G03F1/08;G03F1/14;G03F1/36;G03F1/68;G03F1/70;G06F17/50;(IPC1-7):G06F17/50 主分类号 G03F1/08
代理机构 代理人
主权项
地址