发明名称 Target sidewall design to reduce particle generation during magnetron sputtering
摘要 An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.
申请公布号 US6620296(B2) 申请公布日期 2003.09.16
申请号 US20010905263 申请日期 2001.07.13
申请人 APPLIED MATERIALS, INC. 发明人 GOGH JAMES VAN;THOMPSON JIM;SCHWEITZER MARC;TANAKA YOICHIRO;LIU ALAN;CHAN ANTHONY CT;BROWN KARL;FORSTER JOHN C.
分类号 C23C14/34;C23C14/56;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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