发明名称 Dual mode DDR SDRAM/SGRAM
摘要 A dual-mode dual-data rate (DDR) synchronous dynamic random access memory (SDRAM)/synchronous graphic random access memory (SGRAM). An exemplary DDR SDRAM/SGRAM comprises a single memory device, which itself comprises a memory array and a logic circuitry. The logic circuitry is coupled to the memory array and is configurable to operate the single memory device in a first mode and a second mode. The first mode may include a delayed lock loop (DLL) capability while the second mode may include a non-DLL capability.
申请公布号 US6621496(B1) 申请公布日期 2003.09.16
申请号 US19990257683 申请日期 1999.02.26
申请人 MICRON TECHNOLOGY, INC. 发明人 RYAN KEVIN J.
分类号 G09G5/39;G11C7/10;G11C7/22;G11C11/4076;(IPC1-7):G09G5/39 主分类号 G09G5/39
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