| 摘要 |
PROBLEM TO BE SOLVED: To provide a micro-machined element thermally isolated from a substrate. SOLUTION: The silicon structure is at least partially thermally isolated from the substrate by a gap formed in an insulation layer disposed between the substrate and a silicon layer in which the silicon structure is formed. In embodiments, the substrate is made of silicon and the silicon layer is made of single crystal silicon. In embodiments, the gap is formed such that a surface of the substrate under the gap is maintained substantially unetched. In other embodiments, the gap is formed without affecting the surface of the of the substrate underlying the gap. In particular, the gap may be formed by removing one portion of the insulation layer by etching not affecting the surface of the substrate underlying the gap. In embodiments, the etching is highly selective between the material of the insulation layer and the material of the substrate. Selectivity of the etching may be 20:1 or greater. COPYRIGHT: (C)2003,JPO
|
