发明名称 |
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance |
摘要 |
A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm-3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.
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申请公布号 |
US6621145(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20010866695 |
申请日期 |
2001.05.30 |
申请人 |
PRESIDENT OF TOHOKU UNIVERSITY |
发明人 |
MUROTA JUNICHI;SHIMAMUNE YOSUKE;SAKURABA MASAO;MATSUURA TAKASHI |
分类号 |
H01L21/28;H01L21/205;H01L21/285;H01L21/60;H01L29/45;(IPC1-7):H01L29/167;H01L29/207 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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