| 摘要 |
A method of manufacturing a vertical DRAM device (10) having isolation trenches (38) with a controlled height. A support liner (54) is disposed over support regions (18) of a wafer. A first insulating layer is disposed over the wafer, and the first insulating layer is removed from a top surface of the wafer, leaving a portion (52) of the first insulating layer disposed over at least the array region (16). The isolation trenches (38) may be recessed below a top surface of the wafer pad nitride (14), so that portions of the first insulating layer (52) are left remaining over the support liner (54) over the support region isolation trenches (38).
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