发明名称 BASE MATERIAL FOR DEPOSITING DIAMOND FILM, AND DIAMOND FILM
摘要 PROBLEM TO BE SOLVED: To provide a base material for depositing a vapor phase synthetic diamond film, with which the density of formed diamond nuclei is made high and a continuous film of diamond can be obtained even when the film of the diamond is very thin to the extent of≤10μm. SOLUTION: The base material for depositing the vapor phase synthetic diamond film is characterized in that diamond particles having particle diameters of 2 to 100nm are present in a density of 1×10<SP>8</SP>to 1×10<SP>13</SP>pieces/cm<SP>2</SP>on the surface of the base material, and the gaps between the diamond particles are filled by diamond particles having particle diameters of <2nm. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003261399(A) 申请公布日期 2003.09.16
申请号 JP20020064706 申请日期 2002.03.11
申请人 SHIN ETSU CHEM CO LTD 发明人 NOGUCHI HITOSHI
分类号 C30B29/04;C23C16/02;C23C16/27;(IPC1-7):C30B29/04 主分类号 C30B29/04
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