| 摘要 |
A gate of a semiconductor device is provided to guarantee a stable operation of a gate even if the shape of the gate is not vertically formed in a gate etch process, by forming a gate having a greater width than a desired gate width including a nitride layer pattern confining a gate region. A semiconductor substrate(200) has a gate formation region. A gate insulation layer(210) having a greater width than a desired gate width is formed on the gate formation region and its adjacent region of the semiconductor substrate. A nitride layer pattern(220P) is formed on the gate insulation layer except the gate formation region. A gate conduction layer having a greater width than a desired gate width is formed on the gate insulation layer including the nitride layer pattern. A polysilicon layer(230) and a tungsten layer(240) can be stacked in the gate conduction layer.
|
