| 摘要 |
A semiconductor memory device is provided to reduce the layout area occupied by resistor patterns by stacking at least one resistor pattern on or under another resistor pattern in a manner that the resistor patterns are connected to each other. A first resistor is disposed in the first layer. A second resistor is disposed in the second layer, electrically connected to the first resistor through a contact. At least a part of the second resistor overlaps a contact region(22,23) and the first resistor. The first resistor is one of a plate, an active or a gate resistor. The second resistor is made of metal. The second resistor is made of the same material as the first resistor.
|
