| 摘要 |
A method for fabricating a semiconductor device is provided to form a contact plug with an improved electrical transfer characteristic by avoiding a self-align contact problem by a sacrificial layer. A gate pattern(106) is formed on a substrate(101). A sacrificial layer is formed on the substrate including the gate pattern. The sacrificial layer is partially etched to form a contact hole exposing the substrate between the gate patterns. A contact plug(109A) is formed to fill the contact hole. The sacrificial layer is removed. An insulation layer is formed on the resultant structure. The gate pattern is made of a stack structure of a gate insulation layer(102) and a gate conduction layer(103) and a capping layer surrounding the stack structure.
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