| 摘要 |
A method for forming an STI of a semiconductor device is provided to prevent nitride loss in a corner part of an active region by using a triple oxide layer. A trench is formed in an isolation region of a semiconductor substrate(10) by performing a lithography process using an isolation mask. A sidewall oxide layer is formed on a trench. A first liner nitride layer and a liner oxide layer are formed on a surface of the semiconductor substrate. A HARP(High Aspect Ratio Process) oxide layer(32) is formed on a bottom of the trench. The height of the HARP oxide layer corresponds to 10-20 percent of the total depth of the trench. A spin-on dielectric oxide layer(34) is formed on the HARP oxide layer. The height of the spin-on dielectric oxide layer corresponds to 30-50 percent of the total depth of the trench. A high-density plasma oxide layer(36) is formed on the spin-on dielectric oxide layer. The height of the high-density plasma oxide layer corresponds to 20-40 percent of the total depth of the trench.
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