发明名称 METHOD FOR MANUFACTURING H-TYPE LAYER PEROVSKITE PHOTOCATALYST AND H-TYPE LAYER PEROVSKITE PHOTOCATALYST
摘要 PROBLEM TO BE SOLVED: To provide a new method for manufacturing an H-type layer perovskite photocatalyst having various kinds of cations in the B site of the perovskite layer. SOLUTION: The method is characterized in that the H-type layer perovskite compound is obtained by treating the Aurivillius phase expressed by general formula of Bi<SB>2</SB>A<SB>n-1</SB>B<SB>n</SB>O<SB>3n+3</SB>with an acid to selectively dissolve the bismuth oxide phase and to substitute with protons. In the general formula, A represents an atom positioned in the A site of the perovskite layer and is at least one kind of atom selected from Sr, Ca, La, Ba, Pb, Bi, Na, K and others. When two or more of A are present, the selected atoms may be same or different. B represents an atom positioned in the B site of the perovskite layer and is at least one kind of atom selected from Fe, Mn, Ti, Nb, Ta, W, Mo, Cr, Ga, Zr and others, and n is an integer from 1 to 8. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003260356(A) 申请公布日期 2003.09.16
申请号 JP20020064545 申请日期 2002.03.08
申请人 UNIV WASEDA 发明人 SUGAWARA YOSHIYUKI;YASUMORI ATSUO
分类号 C01G33/00;B01J23/31;B01J35/02;C01G35/00;(IPC1-7):B01J23/31 主分类号 C01G33/00
代理机构 代理人
主权项
地址