| 摘要 |
A gate insulating film of a TFT is formed without increasing a substrate temperature so that a substrate having a low heat resistance such as a plastic substrate can be used. Further, a structure in which an S value of the above TFT is improved and an off leak current is reduced is used to realize the improvement of reliability of a semiconductor device. In the case where the gate insulating film is formed, it is formed by sputtering so that a region having 0.4 atomic % to 1.6 atomic % is present at concentration measurement of hydrogen in the film by an HFS analysis (hydrogen forward scattering analysis). Then, an insulating film is formed thereon by sputtering so that a region having 0.2 atomic % or less is present at concentration measurement of hydrogen in the film by an HFS analysis. When a TFT is manufactured using such a structure of the gate insulating film, there are obtained TFT characteristics such that a subthreshold coefficient is low and a leak current flowing between a gate electrode and a source electrode or a leak current flowing between a gate electrode and a drain electrode is suppressed.
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