发明名称 |
FLASHSPEICHERARCHITEKTUR UNTER VERWENDUNG VON DREI METALSCHICHTENVERBINDUNG |
摘要 |
The present invention discloses a memory wordline decoder that includes a plurality of pre-decoded address lines that are electrically connected with a global x-decoder. A sub x-decoder is electrically connected with the global x-decoder for receiving electrical control signals from the global x-decoder. A memory sector is electrically connected with the sub x-decoder. The global x-decoder selectively controls the sub x-decoder to select a plurality of wordlines in the memory sector. A vertical x-decoder is electrically connected with the global x-decoder and the sub x-decoder. The vertical x-decoder is used to select a predetermined wordline by the global x-decoder during operation. |
申请公布号 |
AT249089(T) |
申请公布日期 |
2003.09.15 |
申请号 |
AT20000948688T |
申请日期 |
2000.07.14 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
BILL, COLIN, S.;SU, JOHATHAN, SHI-CHANG;GUTALA, RAVI, P. |
分类号 |
G11C16/06;G11C8/10;G11C8/12;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C8/00;G11C16/08 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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