| 摘要 |
PURPOSE: A dry-etching method for a semiconductor wafer is provided to improve the quality and the productivity of a semiconductor device by removing fully residues from a side face portion and a bottom face portion as well as an upper face portion of the wafer. CONSTITUTION: The first electrode(1) is connected to a bottom face portion of an edge portion of a wafer and plasma is generated. A reactive ion etching process is performed on an upper face portion and a side face portion of an edge portion of the wafer by using plasma ions. The second electrode(2) is connected to the upper face portion of the edge portion of the wafer and the plasma is generated. The reactive ion etch process is performed on the bottom face portion and the side face portion of the edge portion of the wafer by using plasma radicals.
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