| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device for a trench isolation is provided to be capable of preventing moat by using pull-back PGI(Profiled Grove Insulation) processing of a pad oxide layer in STI(Shallow Trench Isolation). CONSTITUTION: A pad oxide layer and a pad nitride layer are sequentially formed on a semiconductor substrate(100). A trench is formed to define an isolation region. Edge portions of the pad oxide layer are removed by isotropic etching. A sidewall oxide layer(106) is formed at both sidewalls of the trench by using an oxidation process. A gap-fill oxide layer(108) is formed in the trench. After removing the pad nitride layer, the sidewall oxide layer(106) is pre-cleaned to expose an active region.
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