SEMICONDUCTOR ETCHING PROCESS USING MIXED GASES

摘要

PURPOSE: A semiconductor etching process is provided to be capable of preventing etching defects in SAC(Self Align Contact) processing by improving control capability of C5F8 process gas. CONSTITUTION: In SAC(Self Align Contact) processing, C5F8 gas stored in a process gas container(10) and a desired gas are mixed through a gas mixing tube(12). The mixed gases are stored in a mixing gas container(14). Using the mixed gases, the SAC(Self Align Contact) processing is carried out. At the time, He gas is used as the desired gas.