| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device structure capable of reducing the probability of the generation of any failure by reducing the number of masks and reducing the number of processes, and to provide a method for manufacturing a semiconductor device structure capable of determining a source (drain) electrode pattern position for a source (drain) area like self-alignment. <P>SOLUTION: The dope silicon layer of source/drain wiring materials is formed and then etched so that a source/drain electrode and a gate electrode can be simultaneously formed. Then, dopant impurity is thermally diffused from the source/drain electrode to the source/drain area by heat treatment so that an ohm contact junction can be formed, and that the source/drain area can be formed as a first conductive low sheet resistor. <P>COPYRIGHT: (C)2003,JPO</p> |
