| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress the defective breakdown voltage and reliability deterioration of a high dielectric gate insulating film and can prevent the fall of the high relative permittivity of the film, and to provide a method of manufacturing the device. SOLUTION: Since a first side wall composed of a dielectric film is formed on the side wall of a gate electrode after the gate electrode is formed, the defective breakdown voltage and reliability deterioration of the high dielectric gate insulating film caused by a wear or break of the film can be suppressed. In addition, a second side wall composed of an oxidation-resistant film is formed to cover the first side wall, an extremely thin SiO<SB>2</SB>film is not formed in an Si interface in a succeeding process. Namely, the fall of the high specific permittivity of the high dielectric gate insulating film can by prevented. COPYRIGHT: (C)2003,JPO
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