| 摘要 |
PROBLEM TO BE SOLVED: To suppress deterioration in electromigration resistance and to reduce via resistance while making good use of characteristics of a barrier metal needed when, for example, Cu is used as a wiring material. SOLUTION: The method for manufacturing a semiconductor device 1 having a multi-layered wiring structure includes a barrier metal filming process of forming a 2nd inter-layer insulating film 8 on a 1st wiring layer 4 formed by burying the wiring material in a 1st inter-layer insulating film 7, forming a recess of a trench and a via hole in the 2nd inter-layer insulating film 8, and forming the barrier metal 13 in the recess and a barrier metal removing process of removing the barrier metal 13 at the via hole bottom by etching; and the barrier metal 13 at the bottom of the 2nd wiring trench is left in the barrier metal removing process. COPYRIGHT: (C)2003,JPO
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