| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing it capable of ensuring and maintaining electrically excellent characteristics regardless of any silicide structure. SOLUTION: A semiconductor layer 10 is formed with a source area 20s and a drain area 20d and a channel area 20c of a transistor 20. Gate insulating films 21 and gate electrodes 22 made of polysilicon of the transistor 20 are successively formed on the channel area 20c. Metallic electrodes 31 are formed on the gate electrodes 22, and sidewall spacers 30 are formed on the sidewalls of the gate insulating films 21, gate electrodes 22, and metallic electrodes 31. Also, metal layers 40 are formed so as to be made adjacent to the sidewall spacers 30 on the upper face of the source area 20s and the drain area 20d. Also, upper parts of the metallic electrodes 31, the sidewall spacers 30, and the metal layers 40 are flattened. COPYRIGHT: (C)2003,JPO
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