| 摘要 |
PROBLEM TO BE SOLVED: To prevent side etch formation due to fluorine compounds (CFX) generated during barrier insulating film etching. SOLUTION: When a barrier insulating film 53 is etched as shown in Fig. 3 (H) after the formation of an opening 54b having a shape of a wiring groove in an interlayer insulating film 54 as shown in Fig. 3 (G), a fluorine compound 53b is generated. When plasma etching is performed using hydrogen-atom containing gas as shown in Fig. 3 (I), the fluorine compound 53b is converted into a highly volatile compound such as hydrogen fluoride, and then removed. COPYRIGHT: (C)2003,JPO
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