| 摘要 |
PROBLEM TO BE SOLVED: To provide a check pattern for wet etching which can determine the proper and improper condition of wet etching in a short period of time with higher accuracy when contact holes are selectively formed in an insulation film provided on a semiconductor substrate. SOLUTION: The check pattern for determining under-etching, just-etching and over-etching is formed of check patterns 4, 5. The resist mask width of the check pattern 4 is 2d, while the resist mask width of the check pattern 5 is (2d+l). These check patterns 4, 5 are formed by patterning by photolithography after a resist is coated on the insulation film 2 on the semiconductor substrate 1. COPYRIGHT: (C)2003,JPO
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