| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose continuity defect between wires in a connection hole can be suppressed and a method for manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device secures an excellent electric connection between an Al alloy film and a barrier metal film by preventing a Ti film 4 for adhesion from being etched by peeling liquid by: forming the barrier metal film 2 on an insulating film 1; forming the Al alloy film 3 thereupon; forming the TiN film 5 for the barrier metal thereupon; patterning them to form a 1st Al alloy wire 6; forming an inter-layer insulating film 7 after forming a TiN film 10 as a barrier film for the resist peeling liquid on the sidewall of the Al alloy wire 6; forming a via hole positioned on the Al alloy wire 6 on the inter-layer insulating film; and peeling the resist pattern by the peeling liquid. COPYRIGHT: (C)2003,JPO
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