| 发明名称 |
SEMICONDUCTOR STRUCTURE WITH IMPROVED SMALLER FORWARD VOLTAGE LOSS AND HIGHER BLOCKING CAPABILITY |
| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes one or more charge control electrodes (212 (a), 212 (b)). The one or more charge control electrodes (212 (a), 212 (b)) may control the electric field within the drift region (240) of a semiconductor device. |
| 申请公布号 |
WO03034470(A3) |
申请公布日期 |
2003.09.12 |
| 申请号 |
WO2002US33515 |
申请日期 |
2002.10.16 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;KOCON, CHRISTOPHER, BOGUSLAW |
发明人 |
KOCON, CHRISTOPHER, BOGUSLAW |
| 分类号 |
H01L21/331;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/732;H01L29/78;H01L29/861 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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