| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thinly layering process by which a semiconductor element substrate is less likely to crack, contamination to the substrate is little, the substrate can be thinly layered, and subsequent, the peeling or cleaning of the substrate is easy. <P>SOLUTION: The semiconductor element substrate 11 is integrally adhered with a supporting substrate 13 by a heat foaming adhesive sheet 12 and vacuum- chucked to a vacuum chuck base disk 14 to be fixed. Consequently, since the heat foaming adhesive layer of the heat foaming adhesive sheet 12 functions as a shock absorbing layer even in a GaAs semiconductor element substrate easy to be damaged, the substrate is less likely to crack by high-speed grinding, and the substrate can be thinned until 30μm or so. Also, since it is not needed to fix the semiconductor element substrate 11 by using wax or polish the substrate by using an oily abrasive, cleaning is made simple while avoiding contamination by the wax or the oil, etc. When the semiconductor element is heated at 130°C, since the heat foaming adhesive layer of the heat foaming adhesive sheet 12 is foamed, the semiconductor element substrate 11 can be separated easily. <P>COPYRIGHT: (C)2003,JPO</p> |
