| 摘要 |
PROBLEM TO BE SOLVED: To uniformize in-plane roughening in a manufacturing method for increasing the surface area by roughening a doped amorphous silicon surface of a semiconductor substrate surface. SOLUTION: In a step of roughening a doped polysilicon surface for forming a capacitor, after a semiconductor substrate is held in a reaction chamber heated uniformly at a predetermined pressure for a predetermined time, a gas is introduced. Further, when conveying, the gas is moved to the reaction chamber at a predetermined pressure. By doing so, a uniform temperature distribution is established in the plane of the semiconductor substrate, to form a uniformly roughened state. As a result, it is possible to prepare a normal capacitor in any parts in the plane, thereby ensuring a necessary capacity. COPYRIGHT: (C)2003,JPO
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