| 摘要 |
<p>A GaN laser element (100) containing a GaN semiconductor laminate structure containing a luminous layer (106), wherein the semiconductor laminate structure comprises a ridge stripe structure (111) built therein, for producing a stripe-form waveguide, and two opposing side surfaces (117, 118) formed so as to sandwich the stripe-form waveguide in a width direction, at least part of at least one of the side surfaces (117, 118) being processed so as to restrict a Fabry-Perot resonating action in the width direction of the stripe-form waveguide.</p> |
