| 摘要 |
<p>A semiconductor device high in reliability, and a semiconductor device high in yield. The semiconductor device comprises a silicon substrate, a gate insulation film formed on one principle plane side of the silicon substrate, a gate electrode formed by being layered on the gate insulation film, and a diffusion layer containing arsenic and phosphorus, wherein both the concentration of arsenic at a maximum concentration portion and that of phosphorus at a maximum concentration portion are at least 1026 atom/m3 and up to 1027 atom/m3, and a depth of the maximum concentration portion of phosphorus from the surface of the silicon substrate is up to that of the maximum concentration portion of arsenic.</p> |
