| 摘要 |
<p>A method for forming a thin film, characterized in that it comprises a surfactant film formation step of forming a film containing a surfactant on the surface of a substrate for forming the thin film, a vapor phase film growth step of contacting the resultant substrate with a gas containing a silica derivative, to form a thin film containing the silica derivative, and a step of firing the substrate having the thin film containing a silica derivative to decompose and remove the substrate. The method allows the production of a dielectric thin film which has a high porosity and also a high mechanical strength with good productivity.</p> |
