| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device, having a constitution where a block-selecting transistor is permitted to be resistant against high voltage, to restrain a voltage drop upon writing and reduction of a read out current, whereby the sum of the resistances in a conductive region becomes a constant. <P>SOLUTION: A pair of two pieces of conductive region 104 constitute one set of sub bit lines, by connecting one side end part of one conductive region to the other side end of the other conductive region by a wiring 105 along a diagonal line, while selecting transistors 102, connecting a sub bit line and a main bit line 101, are arranged at both sides of a memorial array and a plurality of sets of sub bit lines, connected to the selection transistors, are arranged so as to pass each other. In a region between a pair of conductive region (a, a) which serve as one set of sub bit lines, respective one region b, e between the pair of conductive regions serving as two sets of sub bit lines connected to two pieces of neighbored main bit lines and respective one piece c, d of a pair of conductive regions which serve as two sets of sub bit lines connected to the selection transistor of the other side or total four pieces of bit lines are provided. The selecting transistor 102 is separated by a field oxide film 106 through element isolation. <P>COPYRIGHT: (C)2003,JPO</p> |
