| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for use at high frequencies which exhibits a high dielectric breakdown voltage, and to provide its manufacturing method. SOLUTION: A region 11 including a heavily-doped semiconductor of a first conductivity-type and a region 12 including a lightly-doped semiconductor of a first conductivity-type are provided on the side of a barrier layer 5 farther away from a semiconductor substrate 1 than its end opposite to the semiconductor substrate 1 and between an ohmic layer 7 and a gate electrode 10. The sheet impurity concentration of the region 12 is set lower than the sheet impurity concentration between the bottom face of the gate electrode 10 on the side of the semiconductor substrate 1 and the end face of a channel layer 3 opposite to the semiconductor substrate 1. Additionally, the sheet impurity concentration of the region 11 is set higher than the sheet impurity concentration of the region 12. Consequently, a semiconductor device exhibiting a high dielectric voltage for use at high frequencies can be obtained. COPYRIGHT: (C)2003,JPO
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