| 摘要 |
PROBLEM TO BE SOLVED: To provide a high speed and highly integrated semiconductor device and its manufacturing method for reducing a distance in which a SiGa system (SiGe, SiGeC) mixed crystal layer of a polycrystal from the open edge of a base in the SiGe system HBT (hetero-junction bi-polar transistor) is projected to an epitaxial SiGe system mixed crystal layer. SOLUTION: An opening 38 is formed in the base area of the HBT, a semiconductor layer 30 in a base area is formed by epitaxial growth, and a polycrystal layer is formed on a gate insulating film 12 and an oxide silicon film 21 at the opening 34 in the base area so that a semiconductor device having a non- selective epitaxial base layer can be manufactured. In this case, the gate insulating film 12 and the oxide silicon film 21 at the side edge of the opening 38 in the base area of the HBT are shaped like steps whose number of levels are at least two. COPYRIGHT: (C)2003,JPO
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