发明名称 FORMING METHOD OF WIRING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To prevent a short circuit between wirings embedded in an insulating film and an ARL film thereon. SOLUTION: After a plurality of trenches 111 for wiring are formed in an FSG film 109 and an ARL film 110 formed on a substrate 100, a barrier metal film (tantalum nitride film 112) and conducting films for wiring (copper films 113 and 114) are deposited in sequence on the ARL film 110, in such a manner that each of the trenches 111 is completely filled. After that, the copper films 113 and 114 outside each of the trenches 111 are eliminated by polishing, and the tantalum nitride film 112 outside each of the trenches 111 is eliminated by polishing. After foreign matters stuck to an abrasive pad and the substrate 100 in the polishing are eliminated simultaneously, the surface of the ARL film 110 is polished. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257978(A) 申请公布日期 2003.09.12
申请号 JP20020372192 申请日期 2002.12.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UEDA TETSUYA;HAMANAKA MASASHI;HARADA TAKASHI;YOSHIDA HIDEAKI
分类号 H01L21/3205;H01L21/304;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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