| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the formation of a high-quality metal oxide thin film on a compound semiconductor substrate using a simple and low-cost apparatus, and to facilitate the selective formation of a thin film on the surface of the substrate with a high degree of freedom in selection of the compound semiconductor substrate. SOLUTION: A liquid phase film formation method wherein the compound semiconductor substrate is dipped in a solution containing a fluorine compound and then a thin film of a metal oxide is formed on the compound semiconductor substrate by chemical reaction in the solution comprises steps of (S1) preparing a saturated solution containing a fluorine compound, (S2) for surface reformation, irradiating plasma containing oxygen on the surface of the compound semiconductor substrate, (S3) after the surface reformation, dipping the compound semiconductor substrate in the solution, and then forming the thin film of a metal oxide on the substrate. COPYRIGHT: (C)2003,JPO
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