| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP method by which the enhancement of throughput and the maintenance of flatness are compatible. SOLUTION: This method predicts by simulations an optimum polishing time in CMP and measuring a location where surface irregularities of a wafer are measured, and based on this result, the wafer is polished by the CMP. After the CMP, the surface irregularities are measured by a measuring means, and simulation parameters are changed so as to agree with the measurement. By using the simulation parameters, the optimum polishing time and the candidate measuring location on the wafer subsequently polished are predicted. This method makes the enhancement of throughput and the maintenance of flatness compatible. COPYRIGHT: (C)2003,JPO
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