| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an FET (field effect transistor) in which the breakdown strength Vf of a positive voltage is improved by suppressing the increase of on-resistance. SOLUTION: A buffer layer 2 constituted of undoped GaAs, a channel layer 3 constituted of undoped In<SB>0.2</SB>Ga<SB>0.8</SB>As, a spacer layer 4 constituted of undoped Al<SB>0.75</SB>Ga<SB>0.25</SB>As, a carrier supply layer 5 (which is not shown in a figure) constituted by n-type planer doping, a Schottky layer 6 constituted of undoped AlXGa<SB>1-</SB>XAs (X=0.75→0.25 from the lower layer), and a cap layer 7 constituted of n<SP>+</SP>-type GaAs are successively laminated on a substrate 1 constituted of semi-insulating GaAs. Furthermore, ohmic electrodes 10 are formed at two places on the cap layer 7. Also, a gate electrode 11 is formed on the Schottky layer 6. Also, an element separating area 8 is formed in the neighborhood of the ohmic electrode 10. COPYRIGHT: (C)2003,JPO
|
