发明名称 |
GaN-SYSTEM HETEROJUNCTION FIELD-EFFECT TRANSISTOR AND METHOD FOR CONTROLLING ITS CHARACTERISTIC |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a heterojunction field-effect transistor of a semiconductor of a wide-band gap system by which negative resistance can be developed with high controllability. SOLUTION: An n-type GaN layer is provided near a two-dimensional electronic channel which is formed at AlGaN/GaN heterojunction, and a drain electrode is simultaneously brought into contact with the AlGaN layer and the n-type GaN layer of the surface. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003258005(A) |
申请公布日期 |
2003.09.12 |
申请号 |
JP20020061561 |
申请日期 |
2002.03.07 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
CHOU DONHYON;SHIMIZU MITSUTOSHI;OKUMURA HAJIME |
分类号 |
H01L21/28;H01L21/338;H01L29/778;H01L29/812;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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