| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device having a power feeding member capable of performing plasma treatment safely and efficiently by insulating an electrode from conductive heat. <P>SOLUTION: Working gas is introduced into a gastight treatment container 102, and high frequency power is applied for plasma formation by the working gas. A power feeding member 150 is provided in a plasma etching device 100 for performing specified plasma treatment for the treatment surface of a semiconductor wafer W, and electrically connects a high frequency power source 114 and a lower electrode 104 with the high frequency power applied thereto. The member 150 is so constituted as to have conductors 152, 156 and an dielectric body 154 forming a layer between the two conductors 152, 156. <P>COPYRIGHT: (C)2003,JPO |
