| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based laser device with reduced noise. <P>SOLUTION: In the GaN-based laser device 100 including a GaN-based semiconductor multilayer structure which includes a light emission layer 106, a ridge stripe structure 111 for generating a striped waveguide is built in the semiconductor multilayer structure, and two side faces 117 and 118 are formed which face each other with the striped waveguide shutting in the widthwise direction. At least part of at least one of the side faces 117 and 118 is so processed as to suppress Fabry-Perot resonance in the width direction of the striped waveguide. <P>COPYRIGHT: (C)2003,JPO |
