| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a nitride semiconductor with improved crystallinity on an Si substrate with fewer cracks. <P>SOLUTION: When a second nitride 3-5 group compound semiconductor layer 8 is selectively grown on a first nitride 3-5 group compound semiconductor layer 3 formed partially on the Si substrate 1, a surface of a part where the Si substrate 1 is exposed is nitrided, and in this nitrided part, a selectively growing mask 7 is formed in which a nitride 3-5 group compound semiconductor is not epitaxially grown. Thereafter, the second nitride 3-5 group compound semiconductor layer 8 is epitaxially grown by a selective lateral growth. In this case, a growing area of the second nitride 3-5 group compound semiconductor layer 8 is limited, whereby a generation of cracks is suppressed and its film thickness can be formed thick. <P>COPYRIGHT: (C)2003,JPO |
